CHINESE JOURNAL OF PHYSICS VOL. 40, NO. 2 APRIL 2002

High Photo-Voltage Zinc Oxide Thin Films Deposited by DC Sputtering

P. Samarasekara¹, A.G.K. Nisantha¹, and A. S. Disanayake<sup>2

1</sup>Department of Physics, University of Ruhuna, Matara, Sri Lanka

²Department of Chemistry, University of Ruhuna, Matara, Sri Lanka
(Received August 8, 2001)

The thin films of ZnO have been deposited on conductive glass substrates by DC sputtering. The sputtering parameters have been varied to obtain ZnO films with maximum open circuit photo-voltage measured in the electrolyte KI/I₂. A photo-voltage as high as 40.66 V/m² could be obtained for the film synthesized at the pressure of 6 mbar for a duration of 23.75 hours. These ZnO thin films can be used to absorb the short wavelengths in the ultraviolet (UV) region of the solar spectrum.

PACS. 67.70.+n - Films.
PACS. 72.40.+w - Photoconduction and photovoltaic effects.

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