CHINESE JOURNAL OF PHYSICS VOL. 39, NO. 1 FEBRUARY 2001

Temperature Induced Stress of ZnSe Quantum Dots in
Glass Matrix Thin Films Grown by Pulsed Laser Deposition

Ja-Chin Jan, Shou-Yi Kuo, Sun-Bin Yin and Wen-Feng Hsieh^*

Institute of Electro-Optical Engineering, National Chiao Tung University

Hsinchu, Taiwan 300, R.O.C.
(Received May 9, 2000)

By analyzing the temperature dependent spectral shifts and broadenings of both photoluminescence (PL) and Raman modes from the ZnSe-doped glass thin films grown by pulsed laser deposition, we found that temperature induced stress causes excess shifts of the PL emission bands to higher energies when the samples were kept below 100K. The compressed stress may be a result of the different thermal expansion of the ZnSe nanocrystal and the glass matrix; it is further confirmed by the temperature dependent excess Raman shift in this quantum dot sample as compared with the crystal data in the high-pressure experiment. In addition, we found the activation energies of the nonradiative decay channels associated with the edge-emission and deep-level bands are close to 1TO and 1LO of ZnSe phonon energies.

PACS. 78.20.-e - Optical properties of bulk materials and thin films.
PACS. 42.62.Fi $\,$- Laser spectroscopy.

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