CHINESE JOURNAL OF PHYSICS VOL. 38, NO. 2-II APRIL 2000

Fermi and Anti-Fermi Glass Transition and Subband Resonant Quantum Tunneling in Nb/Ti Metallic Multilayer Films

Juh Tzeng Lue¹, Shang-Yu Liang¹, Yuh-Wei Lee¹, and Hang Ting Lue<sup>2

1</sup>Department of Physics, National Tsing Hua University,

Hsinchu, Taiwan 300, R.O.C.

²Department of Electronic Engineering, National Chao Tung University,

Hsinchu, Taiwan 300, R.O.C.
(Received August 17, 1999)

Multilayer of Nb/Ti and NbN/Ti films with 30 periodic structure were sputtered onto silicon substrates. The current-voltage characteristics measured along the vertical junction at low temperatures exhibit nonlinear step-wise curves. The resonant subband quantum tunneling in the metallic multiple quantum wells can satisfactorily cxpress these peculiar behaviors. The Fermi and anti-Fermi glass transition showing itinerant metallic and insulating conduction properties are also observed at low currents and near critical temperatures.

PACS. 73.40.-c $\;$- Electronic transport in interface structures.
PACS. 73.50.-h $\;$- Electronic transport phenomena in thin films.
PACS. 73.40.Rw - Metal-insulator-metal structures.

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